NPN silicon low power transistor in a TO-18 package, qualified to MIL-PRF-19500/313 for JAN, JANTX, and JANTXV levels. Collector-emitter voltage is 30 Vdc, collector-base voltage is 30 Vdc, and emitter-collector voltage is 15 Vdc. Collector current is rated at 100 mAdc with a total power dissipation of 300 mW at 25°C. Thermal resistance from junction to case is 0.25 °C/mW. Forward current transfer ratio ranges from 30 to 400 depending on collector current. Operating and storage junction temperature ranges from -65°C to +175°C.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N2432/TR |
| Product Name | Bipolar Transistors - BJT |
