Microsemi Corp. Bipolar Transistors - BJT 2N2369AU/TR

The 2N2369AU/TR is an NPN silicon bipolar transistor in a TO-46 package, designed for general-purpose switching and amplification applications. It has a collector-emitter voltage rating of 15 Vdc, a collector-base voltage of 40 Vdc, and an emitter-base voltage of 4.5 Vdc. The device supports a maximum power dissipation of 0.50 W at ambient temperatures up to +54.5°C, with thermal resistance of 350 °C/W. Electrical characteristics include a minimum current gain (hFE) of 20 at 100 mA collector current and a collector-emitter saturation voltage of up to 0.45 V at 100 mA collector and 10 mA base current. It meets MIL-PRF-19500/317 qualification standards. Switching times are specified with a turn-on time of 12 ns and turn-off time of 18 ns under defined test conditions.