Microsemi Corp. Bipolar Transistors - BJT 2N2369A/TR

The 2N2369A/TR is an NPN silicon transistor packaged in a TO-18 (TO-206AA) case, designed for general-purpose switching and amplification applications. It has a collector-emitter voltage rating of 15 Vdc, a collector-base voltage rating of 40 Vdc, and an emitter-base voltage rating of 4.5 Vdc. The device supports a maximum power dissipation of 0.36 W at 25°C and features a thermal resistance from ambient to case of 400 °C/W. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 40 to 120 at 10 mA collector current, a collector-emitter saturation voltage of 0.20 V at 10 mA collector and 1 mA base current, and a base-emitter saturation voltage between 0.70 and 0.85 V under the same conditions. Switching times are 12 µs for turn-on and 18 µs for turn-off. The part is qualified per MIL-PRF-19500/317.