NPN silicon switching transistor in a 4-lead surface mount package with collector connected to the lid, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at 25°C. Operating and storage junction temperature ranges from -65°C to +200°C. Meets MIL-PRF-19500/255 qualification standards.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N2222AUB/TR |
| Product Name | Bipolar Transistors - BJT |
