Microsemi Corp. Bipolar Transistors - BJT 2N2222AUA

The 2N2222AUA is an NPN silicon switching transistor in a TO-18 (TO-206AA) metal case with a pin configuration of emitter, base, and collector. It has a collector-emitter voltage rating of 50 Vdc, a collector-base voltage rating of 75 Vdc, and a collector current of 800 mAdc. The device dissipates up to 0.5 W at +25°C, with a thermal resistance from junction to ambient of 210°C/W. Its forward current transfer ratio ranges from 30 to 325 depending on collector current, and it saturates at 0.3 Vdc at 150 mA collector current with 15 mA base current. The junction and storage temperature range operates from -65°C to +200°C. The transistor is qualified per MIL-PRF-19500/255.