Microsemi Corp. Bipolar Transistors - BJT 2N2222AUA/TR

NPN silicon switching transistor in a 4-pin surface mount package, designed for switching applications. It has a collector-emitter voltage rating of 50 Vdc, collector-base voltage of 75 Vdc, and collector current of 800 mAdc. Power dissipation at +25°C is 0.5 W, with thermal resistance, junction-to-ambient of 210 °C/W. Current gain (hFE) ranges from 50 to 325 at 1.0 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 0.3 V at 150 mA collector and 15 mA base current. Junction and storage temperature range is -65 to +200 °C. Qualified per MIL-PRF-19500/255. Package dimensions conform to TO-18 (TO-206AA) with a 4-pin surface mount configuration, where pin assignments are emitter, base, collector, and unconnected or shielded.