Microsemi Corp. Bipolar Transistors - BJT 2N2222AL

NPN silicon switching transistor in a TO-18 (TO-206AA) case with a 3-pin configuration, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at +25°C. It operates over a junction temperature range of -65 to +200°C and has a thermal resistance of 325 °C/W. The device meets MIL-PRF-19500/255 qualification standards with a forward current transfer ratio between 75 and 325 at a collector current of 10 mA and collector-emitter voltage of 10 Vdc. Collector-emitter saturation voltage is 0.3 V at 150 mA collector current and 15 mA base current, and turn-on and turn-off times are 35 μs and 300 μs, respectively.