Microsemi Corp. Bipolar Transistors - BJT 2N2222AL/TR

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Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
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NPN silicon switching transistor for general-purpose applications, available in a TO-18 (TO-206AA) metal can package with a height of 0.230 inch and lead length up to 0.750 inch. It has a collector-emitter voltage rating of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at +25°C. Thermal resistance junction-to-ambient is 325 °C/W. The device is qualified to MIL-PRF-19500/255 and operates from -65°C to +200°C. The L suffix indicates lead length of 1.5 to 1.75 inches for tape and reel packaging.

Datasheet Summary
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NPN silicon switching transistor for general-purpose applications, available in a TO-18 (TO-206AA) metal can package with a height of 0.230 inch and lead length up to 0.750 inch. It has a collector-emitter voltage rating of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at +25°C. Thermal resistance junction-to-ambient is 325 °C/W. The device is qualified to MIL-PRF-19500/255 and operates from -65°C to +200°C. The L suffix indicates lead length of 1.5 to 1.75 inches for tape and reel packaging.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N2222AL/TR
Bipolar Transistors - BJT 2N2222AL/TR
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N2222AL/TR
Product Name Bipolar Transistors - BJT
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