Microsemi Corp. Bipolar Transistors - BJT 2N2222Ae4

NPN silicon switching transistor in a TO-18 (TO-206AA) package, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at 25°C. The device meets MIL-PRF-19500/255 qualification standards with a junction temperature range of -65 to +200°C. Thermal resistance from junction to ambient is 325°C/W for the standard configuration. Forward current transfer ratio ranges from 50 to 325 depending on collector current, with collector-emitter saturation voltage of 0.3 V at 150 mA collector current and 1.0 V at 500 mA. Switching times are 35 μs turn-on and 300 μs turn-off. Input and output capacitances are 25 pF and 8.0 pF respectively.