NPN silicon switching transistor in TO-18 package with 50 V collector-emitter voltage, 800 mA collector current, and 0.5 W power dissipation at 25°C, qualified to MIL-PRF-19500/255. Thermal resistance is 325 °C/W for standard versions and 210 °C/W for surface-mount UA variants. Junction and storage temperature range is -65 to +200 °C.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N2222Ae4/TR |
| Product Name | Bipolar Transistors - BJT |
