Microsemi Corp. Bipolar Transistors - BJT 2N2222Ae3/TR

The 2N2222Ae3/TR is a silicon NPN switching transistor in the 2N2222A series, qualified to MIL-PRF-19500/255. It is packaged in a TO-18 (TO-206AA) case measuring 0.209 to 0.230 inches in height, with a body diameter of 0.178 to 0.195 inches and lead length up to 0.750 inches. The transistor has a collector-emitter voltage rating of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at +25°C. Junction temperature ranges from -65°C to +200°C. Thermal resistance junction-to-ambient is 325 °C/W. Electrical characteristics include a forward current transfer ratio of 30 to 300 depending on collector current and a collector-emitter saturation voltage of up to 1.0 V at 500 mA collector and 50 mA base current. Switching times are 35 µs turn-on and 300 µs turn-off.