Microsemi Corp. Bipolar Transistors - BJT 2N2222A

NPN silicon switching transistor for general-purpose applications in TO-18 package, with a collector-emitter voltage rating of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at +25°C. The device has a junction temperature range of -65°C to +200°C, and meets MIL-PRF-19500/255 qualification. Thermal resistance junction-to-ambient is 325 °C/W for the standard version. Forward current transfer ratio ranges from 50 to 325 depending on collector current conditions. Switching times are 35 μs turn-on and 300 μs turn-off. Collector-base cutoff current is 10 μAdc at 75 Vdc, and input capacitance is 25 pF.