Microsemi Corp. Bipolar Transistors - BJT 2N2222A/TR

The 2N2222A/TR is an NPN silicon switching transistor in a TO-18 package, rated for a collector-emitter voltage of 50 Vdc and a collector current of 800 mAdc, with a maximum power dissipation of 0.5 W at 25°C. It operates over a junction temperature range of -65°C to +200°C and meets MIL-PRF-19500/255 qualification standards. The device has a minimum forward-current transfer ratio (hFE) of 50 at 1.0 mA collector current and 10 V collector-emitter voltage, increasing to 75-300 at 150 mA. Switching times are up to 35 μs turn-on and 300 μs turn-off. The transistor is qualified for military use and complies with MIL-PRF-19500/255.