Microsemi Corp. Bipolar Transistors - BJT 2N2221AUB/TR

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Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
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NPN silicon switching transistor in a 4-pin surface-mount package with a collector-emitter voltage rating of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at 25°C. The device is qualified to MIL-PRF-19500/255 and features a thermal resistance of 325 °C/W. The collector is internally connected to the case, and the package includes a shielding connection to the lid. Junction and storage temperature range is from -65°C to +200°C.

Datasheet Summary
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NPN silicon switching transistor in a 4-pin surface-mount package with a collector-emitter voltage rating of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at 25°C. The device is qualified to MIL-PRF-19500/255 and features a thermal resistance of 325 °C/W. The collector is internally connected to the case, and the package includes a shielding connection to the lid. Junction and storage temperature range is from -65°C to +200°C.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N2221AUB/TR
Bipolar Transistors - BJT 2N2221AUB/TR
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N2221AUB/TR
Product Name Bipolar Transistors - BJT
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