NPN silicon switching transistor in a 4-pin surface mount package with ceramic lid, rated for a collector-emitter voltage of 50 Vdc and a collector current of 800 mAdc, with a total power dissipation of 0.5 W at +25°C. The device qualifies under MIL-PRF-19500/255 and has a junction temperature range from -65°C to +200°C. Thermal resistance junction-to-ambient is 210 °C/W. The base-emitter saturation voltage is up to 1.2 Vdc at 150 mA collector current and 2.0 Vdc at 500 mA.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N2221AUA/TR |
| Product Name | Bipolar Transistors - BJT |
