Microsemi Corp. Bipolar Transistors - BJT 2N2219Ae4/TR

NPN silicon switching transistor for switching applications, housed in a TO-39 package with dimensions of 7.75 to 8.51 mm in diameter and 8.51 to 9.40 mm in height. It has a collector-emitter voltage rating of 50 Vdc, collector-base voltage of 75 Vdc, and collector current of 800 mA. Power dissipation is 3.0 W at +25°C, with thermal resistance from junction to case at 59 °C/W. Operating and storage junction temperature ranges from -55 to +200 °C. It meets MIL-PRF-19500/251 qualification standards. Forward current transfer ratio (hFE) ranges from 75 to 325 at 1.0 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 0.3 Vdc at 150 mA collector current and 15 mA base current. Switching turn-on time is 35 μs, and turn-off time is 300 μs.