Microsemi Corp. Bipolar Transistors - BJT 2N2219Ae3

The 2N2219A is an NPN silicon switching transistor in a TO-39 package, designed for low-power switching applications. It has a collector-emitter voltage rating of 50 Vdc, a collector current of 800 mA, and a total power dissipation of 3.0 W at +25°C. The thermal resistance from junction to case is 59 °C/W. Electrical characteristics include a minimum DC current gain of 75 at 10 mA collector current and a collector-emitter saturation voltage of 0.3 Vdc at 150 mA collector and 15 mA base current. The device meets MIL-PRF-19500/251 qualification standards and operates over a junction temperature range of -55°C to +200°C. The package has three leads with the collector internally connected to the case.