Microsemi Corp. Bipolar Transistors - BJT 2N2219Ae3/TR

The 2N2219Ae3/TR is a silicon NPN switching transistor in a TO-39 package, rated for a collector-emitter voltage of 50 Vdc and a collector current of 800 mA. It has a total power dissipation of 3.0 W at +25°C with a thermal resistance junction-to-case of 59 °C/W. The junction and storage temperature range is -55 to +200 °C. The device is qualified per MIL-PRF-19500/251. Minimum forward current transfer ratio (hFE) is 75 at 1.0 mA collector current and 100 at 10 mA, rising to 300 at 150 mA. Collector-emitter saturation voltage is 0.3 V at 150 mA collector and 15 mA base current. Turn-on time is 35 ns and turn-off time is 300 ns under specified test conditions.