Microsemi Corp. Bipolar Transistors - BJT 2N2218AL/TR

The 2N2218AL/TR is an NPN silicon switching transistor in a TO-5 package, rated for a collector-emitter voltage of 50 Vdc and a collector current of 800 mA. It has a maximum total power dissipation of 3.0 W at +25°C and a thermal resistance from junction to case of 59 °C/W. Operating and storage junction temperatures range from -55°C to +200°C. The device meets MIL-PRF-19500/251 qualification standards. Its forward current transfer ratio ranges from 30 to 150 at 1.0 mA collector current and 10 V collector-emitter voltage, with a collector-emitter saturation voltage of 0.3 V at 150 mA collector current and 15 mA base current. Base-emitter saturation voltage is 0.6 to 1.2 V under the same conditions. Turn-on time is 35 μs and turn-off time is 300 μs. The collector is internally connected to the case.