Microsemi Corp. Bipolar Transistors - BJT 2N2060L/TR

The 2N2060L/TR is a unitized dual NPN silicon transistor in a TO-78 package, qualified to MIL-PRF-19500/270 JANTX level. It has a collector-emitter voltage rating of 60 Vdc, collector-base voltage of 100 Vdc, and emitter-base voltage of 7.0 Vdc. The collector current is rated at 500 mAdc, with total power dissipation of 600 mW at +25°C for both sections. Operating and storage junction temperatures range from -65°C to +200°C. Forward-current transfer ratio (hFE) ranges from 30 to 90 at 100 mA collector current. Collector-emitter saturation voltage is 0.3 Vdc at 50 mA collector and 5 mA base current. The device meets MIL-PRF-19500/270 qualification standards.