Microsemi Corp. Bipolar Transistors - BJT 2N1711S

NPN silicon bipolar transistor for low-power applications, available in a TO-5 package. Maximum collector-base voltage is 75 Vdc, emitter-base voltage is 7.0 Vdc, and collector current is 500 mAdc. Total power dissipation is 0.8 W at 25°C, derating linearly at 4.57 mW/°C above that temperature. Operating and storage junction temperature range is -65 to +200°C. Thermal impedance is 58 °C/W. Forward current transfer ratio ranges from 20 to 300 depending on collector current. Collector-emitter saturation voltage is 1.5 Vdc at 150 mA collector current and 15 mA base current. Small-signal short-circuit forward current transfer ratio ranges from 80 to 270. Output capacitance is 8.0 to 25 pF. Qualified per MIL-PRF-19500/225 as JAN and JANTX grade.