Microsemi Corp. Bipolar Transistors - BJT 2N1486

The 2N1486 is a high-frequency, epitaxial planar NPN silicon medium power transistor in a hermetically sealed TO-8 package with a kovar base and nickel cap, measuring 11.28 to 13.31 mm in CD, 6.86 to 8.38 mm in CH, and 13.97 to 16.51 mm in HD. It supports a collector-emitter voltage of 55 V, collector-base voltage of 100 V, and collector current of 3.0 A, with a total power dissipation of 25 W at TC = +25 °C. The operating and storage junction temperature range is -65 to +200 °C. It meets MIL-PRF-19500/180 for JANTX qualification and is RoHS compliant in commercial grade versions. The transistor has a collector-emitter saturation voltage of 0.75 V at IC = 750 mA and IB = 40 mA, and a forward current transfer ratio of 35 to 100 under the same conditions.