Microsemi Corp. Bipolar Transistors - BJT 2N1482

The 2N1482 is a military-qualified NPN silicon power transistor in a TO-5 hermetically sealed steel base with nickel cap package, weighing approximately 1.14 grams. It has a collector-emitter voltage rating of 55 V, a collector-base voltage rating of 100 V, and a collector current rating of 1.5 A. The device supports a junction temperature range of -65 to +200 °C and has a thermal resistance of 35 °C/W. It is qualified to MIL-S-19500/207 and is available in RoHS-compliant versions for commercial use. The transistor exhibits a forward-current transfer ratio (hFE) of 35 to 100 at a collector current of 200 mA and collector-emitter voltage of 4.0 V, with a collector-emitter saturation voltage of 0.75 V under specified conditions.