Microsemi Corp. Bipolar Transistors - BJT 2N1481

The 2N1481 is a medium-power NPN silicon planar transistor qualified to the JAN level for high-reliability applications, housed in a hermetically sealed TO-5 package weighing 1.14 grams. It has a collector-emitter voltage rating of 55 V, a collector-base voltage of 100 V, and a maximum collector current of 1.5 A. Power dissipation is 1.0 W at 25 °C, with thermal resistance of 35 °C/W and a junction temperature range of -65 to +200 °C. Forward current transfer ratio ranges from 35 to 100 at 200 mA collector current and 4.0 V collector-emitter voltage. Collector-emitter saturation voltage is 0.75 V at 200 mA collector and 10 mA base current. The forward current cutoff frequency is 800 kHz at 5 mA collector and 28 V collector-base voltage. Switching time sum is 25 µs under specified conditions. It meets MIL-S-19500/207 qualification standards.