Microsemi Corp. Bipolar Transistors - BJT 2N1479

The 2N1479 is a medium-power NPN silicon transistor in a hermetically sealed TO-5 package, designed for high-reliability and general-purpose low-power applications requiring high-frequency switching. It has a collector-emitter voltage rating of 40 V, a collector-base voltage rating of 60 V, and a maximum collector current of 1.5 A. The device operates within a junction and storage temperature range of -65 to +200 °C, with a thermal resistance of 35 °C/W and a total power dissipation of 1.0 W at 25 °C. The transistor is JAN-qualified per MIL-S-19500/207 and features a gold-plated kovar lead structure with a case-connected collector. Its forward current gain (hFE) ranges from 20 to 60 at 200 mA collector current and 4.0 V collector-emitter voltage, with a collector-emitter saturation voltage of 0.75 V under specified conditions. The forward current cutoff frequency is 800 kHz, and the switching time is 25 µs. Weight is approximately 1.14 grams.