A Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23 and 4N24’s can be tested to customer specifications.
Features:
• Qualified to MIL-PRF-19500/486
• Collector in electrical contact with case
• Overall current gain: 1.5 typical (4N24)
• Base lead provided for conventional transistor
biasing
• Rugged package
• High gain, high voltage transistor
• +1kV electrical isolation
| Micropac Industries, Inc. | Micropac Industries, Inc. | |
|---|---|---|
| Product Category | Optocouplers | Optocouplers |
| Product Number | 4N22 | 4N22 |
| Product Name | Mii Optocoupler | 4N JEDEC Series |
| Input | DC | DC |
| Output | Phototransistor | Phototransistor |
| Package Type | TO-5 | TO-5 |
| Mounting Option | Through Hole | Through Hole |
| Lead Length | 0.5000 inch (12.7 mm) | 0.5000 inch (12.7 mm) |
