Micron Technology, Inc. Memory RC28F128J3F75F

Description
FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Parallel 75ns 64-EasyBGA (10x13)
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Description
FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Parallel 75ns 64-EasyBGA (10x13)
Request a Quote
Datasheet
Datasheet Summary
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The RC28F128J3F75F is a 128 Mbit NOR Flash memory device from Quarktwin Technology Ltd., featuring a symmetrical architecture with 128 blocks of 1 Mbit each. It operates with an initial access speed of 75 ns and supports 25 ns asynchronous page-mode reads. The device includes a 256-word write buffer for x16 mode and a 256-byte write buffer for x8 mode, with an effective programming time of 1.41 µs per byte. This memory operates within a system voltage range of 2.7 V to 3.6 V and is available in two packaging options: a 56-lead TSOP and a 64-ball Easy BGA package. Enhanced security features include individual block locking, password access, and a one-time programmable register with 64 bits for unique information. The device supports program and erase suspend operations and is compatible with the Common Flash Interface (CFI). The RC28F128J3F75F is designed for a wide operating temperature range of -40 °C to +85 °C and offers a minimum of 100,000 erase cycles per block, ensuring reliability for embedded applications.

Datasheet Summary
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The RC28F128J3F75F is a 128 Mbit NOR Flash memory device from Quarktwin Technology Ltd., featuring a symmetrical architecture with 128 blocks of 1 Mbit each. It operates with an initial access speed of 75 ns and supports 25 ns asynchronous page-mode reads. The device includes a 256-word write buffer for x16 mode and a 256-byte write buffer for x8 mode, with an effective programming time of 1.41 µs per byte. This memory operates within a system voltage range of 2.7 V to 3.6 V and is available in two packaging options: a 56-lead TSOP and a 64-ball Easy BGA package. Enhanced security features include individual block locking, password access, and a one-time programmable register with 64 bits for unique information. The device supports program and erase suspend operations and is compatible with the Common Flash Interface (CFI). The RC28F128J3F75F is designed for a wide operating temperature range of -40 °C to +85 °C and offers a minimum of 100,000 erase cycles per block, ensuring reliability for embedded applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - RC28F128J3F75F-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Parallel 75ns 64-EasyBGA (10x13)

FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Parallel 75ns 64-EasyBGA (10x13)

Buy Now Datasheet
IT infrastructure Memory - 1451966-RC28F128J3F75F - Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1451966-RC28F128J3F75F
IT infrastructure Memory 1451966-RC28F128J3F75F
Category: IT infrastructure Memory Win Source Part Number: 1451966-RC28F128J3F7 5F Manufacturer: Numonyx B.V

Category: IT infrastructure Memory
Win Source Part Number: 1451966-RC28F128J3F75F
Manufacturer: Numonyx B.V

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Memory - RC28F128J3F75F - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 75 ns 64-EasyBGA (10x13)

FLASH - NOR Memory IC 128Mbit Parallel 75 ns 64-EasyBGA (10x13)

Buy Now Datasheet
IC FLASH 128MBIT PAR 64EASYBGA

IC FLASH 128MBIT PAR 64EASYBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - RC28F128J3F75F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
RC28F128J3F75F
Integrated Circuits (ICs) - Memory - Memory RC28F128J3F75F
IC FLASH 128MBIT PAR 64EASYBGA

IC FLASH 128MBIT PAR 64EASYBGA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number RC28F128J3F75F-ND 1451966-RC28F128J3F75F RC28F128J3F75F RC28F128J3F75F RC28F128J3F75F
Product Name Memory IT infrastructure Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash Flash Flash; FLASH Flash; Flash Flash; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 64-TBGA BGA; 64-TBGA
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