Micron Technology, Inc. Memory PC28F640P30B85D TR

Description
FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 52MHz 85ns 64-EasyBGA (10x13)
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Description
FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 52MHz 85ns 64-EasyBGA (10x13)
Request a Quote
Datasheet
Datasheet Summary
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The PC28F640P30B85D TR is a 64Mbit NOR Flash memory device from Quarktwin Technology Ltd., featuring a parallel interface with a maximum access speed of 85 ns. It supports synchronous-burst read mode at 52 MHz with zero wait states and asynchronous-page read mode at 25 ns. The memory architecture includes multi-level cell technology, providing high density at a low cost, with four 32-KByte parameter blocks and a 128-KByte main block. Operating voltage ranges from 1.7 V to 2.0 V for the core and 1.7 V to 3.6 V for I/O. The device has a low standby current of 20 OºA and a typical synchronous read current of 13 mA at 40 MHz. It is rated for an operating temperature range of -40 ¬8C to +85 ¬8C and supports a minimum of 100,000 erase cycles per block. Security features include one-time programmable registers, selectable OTP space in the main array, and various write protection mechanisms. The device is available in multiple packaging options, including a 64-Ball Easy BGA package. This product is suitable for applications requiring reliable and high-performance embedded memory solutions.

Datasheet Summary
Powered by GS/AI

The PC28F640P30B85D TR is a 64Mbit NOR Flash memory device from Quarktwin Technology Ltd., featuring a parallel interface with a maximum access speed of 85 ns. It supports synchronous-burst read mode at 52 MHz with zero wait states and asynchronous-page read mode at 25 ns. The memory architecture includes multi-level cell technology, providing high density at a low cost, with four 32-KByte parameter blocks and a 128-KByte main block. Operating voltage ranges from 1.7 V to 2.0 V for the core and 1.7 V to 3.6 V for I/O. The device has a low standby current of 20 OºA and a typical synchronous read current of 13 mA at 40 MHz. It is rated for an operating temperature range of -40 ¬8C to +85 ¬8C and supports a minimum of 100,000 erase cycles per block. Security features include one-time programmable registers, selectable OTP space in the main array, and various write protection mechanisms. The device is available in multiple packaging options, including a 64-Ball Easy BGA package. This product is suitable for applications requiring reliable and high-performance embedded memory solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - PC28F640P30B85DTR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 52MHz 85ns 64-EasyBGA (10x13)

FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 52MHz 85ns 64-EasyBGA (10x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - PC28F640P30B85D TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F640P30B85D TR
Integrated Circuits (ICs) - Memory - Memory PC28F640P30B85D TR
IC FLASH 64MBIT PAR 64EASYBGA

IC FLASH 64MBIT PAR 64EASYBGA

Supplier's Site
Memory - PC28F640P30B85D TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit Parallel 52 MHz 85 ns 64-EasyBGA (10x13)

FLASH - NOR Memory IC 64Mbit Parallel 52 MHz 85 ns 64-EasyBGA (10x13)

Buy Now Datasheet
IC FLASH 64MBIT PAR 64EASYBGA

IC FLASH 64MBIT PAR 64EASYBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number PC28F640P30B85DTR-ND PC28F640P30B85D TR PC28F640P30B85D TR PC28F640P30B85D TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; FLASH Flash; Flash
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits 64000 kbits
Package Type 64-TBGA BGA; 64-TBGA
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