Micron Technology, Inc. Memory PC28F512P30EFB TR

Description
IC FLASH 512MBIT PAR 64EASYBGA
Datasheet
Description
IC FLASH 512MBIT PAR 64EASYBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 512MBIT PAR 64EASYBGA

IC FLASH 512MBIT PAR 64EASYBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - PC28F512P30EFB TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F512P30EFB TR
Integrated Circuits (ICs) - Memory - Memory PC28F512P30EFB TR
IC FLASH 512MBIT PAR 64EASYBGA

IC FLASH 512MBIT PAR 64EASYBGA

Supplier's Site
Memory - PC28F512P30EFB TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-EasyBGA (10x13)

FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-EasyBGA (10x13)

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number PC28F512P30EFB TR PC28F512P30EFB TR PC28F512P30EFB TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Access Time 100 ns 100 ns
Density 512000 kbits 512000 kbits 512000 kbits
Cycle Time 100 ns
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1712220 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Pins 8
Supply Voltage 3.6 v, 2.7 v
View Details
Memory - 28294110 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Memory - 27C512AE200/883C - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Density 512 kbits
View Details