Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory PC28F512P30EFB TR

Description
IC FLASH 512MBIT PAR 64EASYBGA
Datasheet
Description
IC FLASH 512MBIT PAR 64EASYBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - PC28F512P30EFB TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F512P30EFB TR
Integrated Circuits (ICs) - Memory - Memory PC28F512P30EFB TR
IC FLASH 512MBIT PAR 64EASYBGA

IC FLASH 512MBIT PAR 64EASYBGA

Supplier's Site
Memory - PC28F512P30EFB TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-EasyBGA (10x13)

FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-EasyBGA (10x13)

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IC FLASH 512MBIT PAR 64EASYBGA

IC FLASH 512MBIT PAR 64EASYBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number PC28F512P30EFB TR PC28F512P30EFB TR PC28F512P30EFB TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH Flash; Flash
Cycle Time 100 ns
Density 512000 kbits 512000 kbits 512000 kbits
Supply Voltage Surface Mount 1.7V ~ 2V
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