Micron Technology, Inc. Memory PC28F512P30EFB TR

Description
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-EasyBGA (10x13)
Datasheet
Description
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-EasyBGA (10x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - PC28F512P30EFB TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-EasyBGA (10x13)

FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-EasyBGA (10x13)

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Integrated Circuits (ICs) - Memory - Memory - PC28F512P30EFB TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F512P30EFB TR
Integrated Circuits (ICs) - Memory - Memory PC28F512P30EFB TR
IC FLASH 512MBIT PAR 64EASYBGA

IC FLASH 512MBIT PAR 64EASYBGA

Supplier's Site
IC FLASH 512MBIT PAR 64EASYBGA

IC FLASH 512MBIT PAR 64EASYBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number PC28F512P30EFB TR PC28F512P30EFB TR PC28F512P30EFB TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 100 ns 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits
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