Micron Technology, Inc. Memory PC28F512P30EF0

Description
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 52MHz 100ns 64-EasyBGA (8x10)
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 52MHz 100ns 64-EasyBGA (8x10)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - PC28F512P30EF0-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 52MHz 100ns 64-EasyBGA (8x10)

FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 52MHz 100ns 64-EasyBGA (8x10)

Buy Now Datasheet
Memory - PC28F512P30EF0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 52 MHz 100 ns 64-EasyBGA (8x10)

FLASH - NOR Memory IC 512Mbit Parallel 52 MHz 100 ns 64-EasyBGA (8x10)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - PC28F512P30EF0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F512P30EF0
Integrated Circuits (ICs) - Memory - Memory PC28F512P30EF0
IC FLASH 512MBIT PAR 64EASYBGA

IC FLASH 512MBIT PAR 64EASYBGA

Supplier's Site
IC FLASH 512MBIT PAR 64EASYBGA

IC FLASH 512MBIT PAR 64EASYBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number PC28F512P30EF0-ND PC28F512P30EF0 PC28F512P30EF0 PC28F512P30EF0
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 64-TBGA BGA; 64-TBGA BGA
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420769 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory - AS28C010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 120 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 5962-8670601LA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category PROM; PROM
Access Time 40 ns
Density 8 kbits
View Details