Micron Technology, Inc. Memory IC and Storage Component PC28F512M29EWHF

Description
IC FLASH 512MBIT PARALLEL 64FBGA Product overview: PC28F512M29EWHF from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-PC28F512M29EWHF can be used for catalog matching and distributor lookup.
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Description
IC FLASH 512MBIT PARALLEL 64FBGA Product overview: PC28F512M29EWHF from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-PC28F512M29EWHF can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The PC28F512M29EWHF is a 512Mb embedded parallel NOR Flash memory device from Quarktwin Technology Ltd. It operates at a supply voltage of 2.7,Äì3.6V for program, erase, and read operations, with I/O buffers requiring a voltage of 1.65,ÄìV_CC. The memory features asynchronous random and page read capabilities, with a page size of 16 words (32 bytes) and a page access time of 25ns. Random access times are 100ns for the fortified BGA package and 110ns for the TSOP package. This device includes a 512-word program buffer, allowing for a typical program time of 0.88¬µs per byte. The memory is organized into uniform blocks of 128-Kbytes or 64-Kwords each and supports program/erase suspend and resume operations. It also features a BLANK CHECK operation to verify erased blocks and various programming and erasing capabilities, including fast buffered programming and block/chip erase. The PC28F512M29EWHF is compliant with JESD47 standards, offering a minimum of 100,000 erase cycles per block and a typical data retention of 20 years. It is manufactured using 65nm multilevel cell (MLC) process technology and is available in a 64-ball fortified BGA package measuring 13 x 11mm. The device is RoHS-compliant and halogen-free, with an operating temperature range of -40¬8C to +85¬8C.

Datasheet Summary
Powered by GS/AI

The PC28F512M29EWHF is a 512Mb embedded parallel NOR Flash memory device from Quarktwin Technology Ltd. It operates at a supply voltage of 2.7,Äì3.6V for program, erase, and read operations, with I/O buffers requiring a voltage of 1.65,ÄìV_CC. The memory features asynchronous random and page read capabilities, with a page size of 16 words (32 bytes) and a page access time of 25ns. Random access times are 100ns for the fortified BGA package and 110ns for the TSOP package. This device includes a 512-word program buffer, allowing for a typical program time of 0.88¬µs per byte. The memory is organized into uniform blocks of 128-Kbytes or 64-Kwords each and supports program/erase suspend and resume operations. It also features a BLANK CHECK operation to verify erased blocks and various programming and erasing capabilities, including fast buffered programming and block/chip erase. The PC28F512M29EWHF is compliant with JESD47 standards, offering a minimum of 100,000 erase cycles per block and a typical data retention of 20 years. It is manufactured using 65nm multilevel cell (MLC) process technology and is available in a 64-ball fortified BGA package measuring 13 x 11mm. The device is RoHS-compliant and halogen-free, with an operating temperature range of -40¬8C to +85¬8C.

Suppliers

Company
Product
Description
Supplier Links
Memory IC and Storage Component - 774-PC28F512M29EWHF - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-PC28F512M29EWHF
Memory IC and Storage Component 774-PC28F512M29EWHF
IC FLASH 512MBIT PARALLEL 64FBGA Product overview: PC28F512M29EWHF from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-PC28F512M29EWHF can be used for catalog matching and distributor lookup.

IC FLASH 512MBIT PARALLEL 64FBGA Product overview: PC28F512M29EWHF from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-PC28F512M29EWHF can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - Flash - PC28F512M29EWHF - 791412-PC28F512M29EWHF - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - PC28F512M29EWHF
791412-PC28F512M29EWHF
Memory - Flash - PC28F512M29EWHF 791412-PC28F512M29EWHF
Manufacturer: Micron Technology Inc. Win Source Part Number: 791412-PC28F512M29EW HF Packaging: Tray Operating Temperature Range: -40°C ~ 85°C (TA) Package: 64-LBGA Mounting: SMD Technology: FLASH - NOR Operating Supply Voltage: 2.7 V ~ 3.6 V Memory Type: Non-Volatile Memory Size: 512Mb (64M x 8, 32M x 16) Access Time: 100ns Family Name: PC28F512M29EW Categories: Integrated Circuits (ICs) Memory Format: FLASH Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Manufacturer Package: 64-FBGA (11x13) Alternative Parts (Cross-Reference): S29GL512T12DHN020; S29GL512T12DHN010; S29GL512T11FHIV23; S29GL512T13DHNV10; Introduction Date: May 01, 2008 ECCN: 3A991.b.1.a Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Win Source Part Number: 791412-PC28F512M29EWHF
Packaging: Tray
Operating Temperature Range: -40°C ~ 85°C (TA)
Package: 64-LBGA
Mounting: SMD
Technology: FLASH - NOR
Operating Supply Voltage: 2.7 V ~ 3.6 V
Memory Type: Non-Volatile
Memory Size: 512Mb (64M x 8, 32M x 16)
Access Time: 100ns
Family Name: PC28F512M29EW
Categories: Integrated Circuits (ICs)
Memory Format: FLASH
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Manufacturer Package: 64-FBGA (11x13)
Alternative Parts (Cross-Reference): S29GL512T12DHN020; S29GL512T12DHN010; S29GL512T11FHIV23; S29GL512T13DHNV10;
Introduction Date: May 01, 2008
ECCN: 3A991.b.1.a
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Memory - PC28F512M29EWHF-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 100ns 64-FBGA (11x13)

FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 100ns 64-FBGA (11x13)

Buy Now Datasheet
Memory - PC28F512M29EWHF - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-FBGA (11x13)

FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-FBGA (11x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - PC28F512M29EWHF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F512M29EWHF
Integrated Circuits (ICs) - Memory - Memory PC28F512M29EWHF
IC FLASH 512MBIT PARALLEL 64FBGA

IC FLASH 512MBIT PARALLEL 64FBGA

Supplier's Site
IC FLASH 512MBIT PARALLEL 64FBGA

IC FLASH 512MBIT PARALLEL 64FBGA

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-PC28F512M29EWHF 791412-PC28F512M29EWHF PC28F512M29EWHF-ND PC28F512M29EWHF PC28F512M29EWHF PC28F512M29EWHF
Product Name Memory IC and Storage Component Memory - Flash - PC28F512M29EWHF Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Non-Volatile Flash; Non-Volatile Flash Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 100 ns 100 ns 100 ns 100 ns
Cycle Time 100 ns 100 ns 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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