Micron Technology, Inc. Memory PC28F512M29EWHF

The PC28F512M29EWHF is a 512Mb embedded parallel NOR Flash memory device from Quarktwin Technology Ltd. It operates at a supply voltage of 2.7,Äì3.6V for program, erase, and read operations, with I/O buffers requiring a voltage of 1.65,ÄìV_CC. The memory features asynchronous random and page read capabilities, with a page size of 16 words (32 bytes) and a page access time of 25ns. Random access times are 100ns for the fortified BGA package and 110ns for the TSOP package. This device includes a 512-word program buffer, allowing for a typical program time of 0.88¬µs per byte. The memory is organized into uniform blocks of 128-Kbytes or 64-Kwords each and supports program/erase suspend and resume operations. It also features a BLANK CHECK operation to verify erased blocks and various programming and erasing capabilities, including fast buffered programming and block/chip erase. The PC28F512M29EWHF is compliant with JESD47 standards, offering a minimum of 100,000 erase cycles per block and a typical data retention of 20 years. It is manufactured using 65nm multilevel cell (MLC) process technology and is available in a 64-ball fortified BGA package measuring 13 x 11mm. The device is RoHS-compliant and halogen-free, with an operating temperature range of -40¬8C to +85¬8C.