Micron Technology, Inc. Memory PC28F512M29EWHE TR

Description
FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 100ns 64-FBGA (11x13)
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 100ns 64-FBGA (11x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - PC28F512M29EWHETR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 100ns 64-FBGA (11x13)

FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 100ns 64-FBGA (11x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - PC28F512M29EWHE TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F512M29EWHE TR
Integrated Circuits (ICs) - Memory - Memory PC28F512M29EWHE TR
IC FLASH 512MBIT PARALLEL 64FBGA

IC FLASH 512MBIT PARALLEL 64FBGA

Supplier's Site
Memory - PC28F512M29EWHE TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-FBGA (11x13)

FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-FBGA (11x13)

Buy Now Datasheet
IC FLASH 512MBIT PARALLEL 64FBGA

IC FLASH 512MBIT PARALLEL 64FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number PC28F512M29EWHETR-ND PC28F512M29EWHE TR PC28F512M29EWHE TR PC28F512M29EWHE TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; FLASH Flash; Flash
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 64-LBGA BGA; 64-LBGA
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