Micron Technology, Inc. Memory PC28F512M29AWLB TR

Description
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-FBGA (11x13)
Description
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-FBGA (11x13)

Suppliers

Company
Product
Description
Supplier Links
Memory - PC28F512M29AWLB TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-FBGA (11x13)

FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-FBGA (11x13)

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Integrated Circuits (ICs) - Memory - Memory - PC28F512M29AWLB TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F512M29AWLB TR
Integrated Circuits (ICs) - Memory - Memory PC28F512M29AWLB TR
IC FLASH 512MBIT PARALLEL 64FBGA

IC FLASH 512MBIT PARALLEL 64FBGA

Supplier's Site
IC FLASH 512MBIT PARALLEL 64FBGA

IC FLASH 512MBIT PARALLEL 64FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number PC28F512M29AWLB TR PC28F512M29AWLB TR PC28F512M29AWLB TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 100 ns 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits
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