Micron Technology, Inc. Memory PC28F512M29AWHB TR

Description
IC FLASH 512MBIT PARALLEL 64FBGA
Description
IC FLASH 512MBIT PARALLEL 64FBGA

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Description
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IC FLASH 512MBIT PARALLEL 64FBGA

IC FLASH 512MBIT PARALLEL 64FBGA

Supplier's Site
Memory - PC28F512M29AWHB TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-FBGA (11x13)

FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-FBGA (11x13)

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Integrated Circuits (ICs) - Memory - Memory - PC28F512M29AWHB TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F512M29AWHB TR
Integrated Circuits (ICs) - Memory - Memory PC28F512M29AWHB TR
IC FLASH 512MBIT PARALLEL 64FBGA

IC FLASH 512MBIT PARALLEL 64FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number PC28F512M29AWHB TR PC28F512M29AWHB TR PC28F512M29AWHB TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Access Time 100 ns 100 ns
Density 512000 kbits 512000 kbits 512000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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