Micron Technology, Inc. Memory PC28F256P30B2F TR

Description
FLASH - NOR Memory IC 256Mbit Parallel 52 MHz 100 ns 64-EasyBGA (10x13)
Description
FLASH - NOR Memory IC 256Mbit Parallel 52 MHz 100 ns 64-EasyBGA (10x13)

Suppliers

Company
Product
Description
Supplier Links
Memory - PC28F256P30B2F TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 256Mbit Parallel 52 MHz 100 ns 64-EasyBGA (10x13)

FLASH - NOR Memory IC 256Mbit Parallel 52 MHz 100 ns 64-EasyBGA (10x13)

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IC FLASH 256MBIT PAR 64EASYBGA

IC FLASH 256MBIT PAR 64EASYBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - PC28F256P30B2F TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F256P30B2F TR
Integrated Circuits (ICs) - Memory - Memory PC28F256P30B2F TR
IC FLASH 256MBIT PAR 64EASYBGA

IC FLASH 256MBIT PAR 64EASYBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number PC28F256P30B2F TR PC28F256P30B2F TR PC28F256P30B2F TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 100 ns 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
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