Micron Technology, Inc. Memory PC28F00AP33EF0

Description
FLASH - NOR Memory IC 1Gb (64M x 16) Parallel 52MHz 95ns 64-EasyBGA (8x10)
Request a Quote
Description
FLASH - NOR Memory IC 1Gb (64M x 16) Parallel 52MHz 95ns 64-EasyBGA (8x10)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The PC28F00AP33EF0 is a 1Gb Parallel NOR Flash memory device from Quarktwin Technology Ltd., designed for high performance and reliability. It features a 64-ball Easy BGA package and operates at a core voltage of 2.3V to 3.6V. The device supports a maximum clock frequency of 52 MHz with zero WAIT states, allowing for efficient synchronous burst read operations. It offers a typical initial access time of 100 ns and supports various burst modes. The memory architecture includes multiple blocks, with a minimum of 100,000 erase cycles per block, ensuring durability for applications requiring frequent data updates. The device also incorporates security features such as one-time programmable registers and individual block locking capabilities. Typical standby current is 75 ¬µA, making it suitable for low-power applications. The operating temperature range is from -40¬8C to +85¬8C, which enhances its applicability in diverse environments. Engineers considering this memory device will find it suitable for applications requiring high-speed data access and robust performance in embedded systems.

Datasheet Summary
Powered by GS/AI

The PC28F00AP33EF0 is a 1Gb Parallel NOR Flash memory device from Quarktwin Technology Ltd., designed for high performance and reliability. It features a 64-ball Easy BGA package and operates at a core voltage of 2.3V to 3.6V. The device supports a maximum clock frequency of 52 MHz with zero WAIT states, allowing for efficient synchronous burst read operations. It offers a typical initial access time of 100 ns and supports various burst modes. The memory architecture includes multiple blocks, with a minimum of 100,000 erase cycles per block, ensuring durability for applications requiring frequent data updates. The device also incorporates security features such as one-time programmable registers and individual block locking capabilities. Typical standby current is 75 ¬µA, making it suitable for low-power applications. The operating temperature range is from -40¬8C to +85¬8C, which enhances its applicability in diverse environments. Engineers considering this memory device will find it suitable for applications requiring high-speed data access and robust performance in embedded systems.

Suppliers

Company
Product
Description
Supplier Links
Memory - PC28F00AP33EF0-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 1Gb (64M x 16) Parallel 52MHz 95ns 64-EasyBGA (8x10)

FLASH - NOR Memory IC 1Gb (64M x 16) Parallel 52MHz 95ns 64-EasyBGA (8x10)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - PC28F00AP33EF0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F00AP33EF0
Integrated Circuits (ICs) - Memory - Memory PC28F00AP33EF0
IC FLASH 1GBIT PAR 64EASYBGA

IC FLASH 1GBIT PAR 64EASYBGA

Supplier's Site
IC FLASH 1GBIT PAR 64EASYBGA

IC FLASH 1GBIT PAR 64EASYBGA

Supplier's Site Datasheet
Memory - PC28F00AP33EF0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 1Gbit Parallel 52 MHz 95 ns 64-EasyBGA (8x10)

FLASH - NOR Memory IC 1Gbit Parallel 52 MHz 95 ns 64-EasyBGA (8x10)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number PC28F00AP33EF0-ND PC28F00AP33EF0 PC28F00AP33EF0 PC28F00AP33EF0
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; Flash Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 64-TBGA BGA BGA; 64-TBGA
Supply Voltage 2.3V ~ 3.6V -40degC ~ 85degC (TA) 3.6V; 2.3V ~ 3.6V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8SLC512K32PECA - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Rochester Electronics
Specs
Memory Category Flash; Flash
Density 32000 kbits
View Details
Flash Memory - 1882567 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
SMV512K32-SP 16MB Radiation-Hardened SRAM - SMV512K32HFG/EM - Texas Instruments
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details