Micron Technology, Inc. Memory NP8P128AE3T1760E

Description
IC PCM 128MBIT PAR 64EASYBGA
Datasheet
Description
IC PCM 128MBIT PAR 64EASYBGA
Datasheet

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IC PCM 128MBIT PAR 64EASYBGA

IC PCM 128MBIT PAR 64EASYBGA

Supplier's Site Datasheet
Memory - NP8P128AE3T1760E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
PCM (PRAM) Memory IC 128Mbit Parallel, SPI 135 ns 64-EasyBGA (8x10)

PCM (PRAM) Memory IC 128Mbit Parallel, SPI 135 ns 64-EasyBGA (8x10)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NP8P128AE3T1760E
Integrated Circuits (ICs) - Memory - Memory NP8P128AE3T1760E
IC PCM 128MBIT PAR 64EASYBGA

IC PCM 128MBIT PAR 64EASYBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number NP8P128AE3T1760E NP8P128AE3T1760E NP8P128AE3T1760E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category PCM (PRAM) PCM (PRAM) Non-Volatile
Access Time 135 ns 135 ns
Density 128000 kbits 128000 kbits 128000 kbits
Operating Temperature -30 to 85 C (-22 to 185 F)
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