Micron Technology, Inc. Memory NP5Q128AE3ESFC0E

Description
PCM (PRAM) Memory IC 128Mbit SPI 33 MHz 360 µs 16-SO
Datasheet
Description
PCM (PRAM) Memory IC 128Mbit SPI 33 MHz 360 µs 16-SO
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NP5Q128AE3ESFC0E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
PCM (PRAM) Memory IC 128Mbit SPI 33 MHz 360 µs 16-SO

PCM (PRAM) Memory IC 128Mbit SPI 33 MHz 360 µs 16-SO

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IC PCM 128MBIT SPI 33MHZ 16SO W

IC PCM 128MBIT SPI 33MHZ 16SO W

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - NP5Q128AE3ESFC0E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NP5Q128AE3ESFC0E
Integrated Circuits (ICs) - Memory - Memory NP5Q128AE3ESFC0E
IC PCM 128MBIT SPI 33MHZ 16SO W

IC PCM 128MBIT SPI 33MHZ 16SO W

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number NP5Q128AE3ESFC0E NP5Q128AE3ESFC0E NP5Q128AE3ESFC0E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category PCM (PRAM) PCM (PRAM) Non-Volatile
Access Time 360000 ns 360000 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits
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