Micron Technology, Inc. Memory NP5Q128AE3ESFC0E

Description
IC PCM 128MBIT SPI 33MHZ 16SO W
Datasheet
Description
IC PCM 128MBIT SPI 33MHZ 16SO W
Datasheet

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Description
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IC PCM 128MBIT SPI 33MHZ 16SO W

IC PCM 128MBIT SPI 33MHZ 16SO W

Supplier's Site Datasheet
Memory - NP5Q128AE3ESFC0E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
PCM (PRAM) Memory IC 128Mbit SPI 33 MHz 360 µs 16-SO

PCM (PRAM) Memory IC 128Mbit SPI 33 MHz 360 µs 16-SO

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Integrated Circuits (ICs) - Memory - Memory - NP5Q128AE3ESFC0E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NP5Q128AE3ESFC0E
Integrated Circuits (ICs) - Memory - Memory NP5Q128AE3ESFC0E
IC PCM 128MBIT SPI 33MHZ 16SO W

IC PCM 128MBIT SPI 33MHZ 16SO W

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number NP5Q128AE3ESFC0E NP5Q128AE3ESFC0E NP5Q128AE3ESFC0E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category PCM (PRAM) PCM (PRAM) Non-Volatile
Access Time 360000 ns 360000 ns
Density 128000 kbits 128000 kbits 128000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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