Micron Technology, Inc. Memory NAND512W4A0AN6E

Description
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP
Datasheet
Description
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NAND512W4A0AN6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP

FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP

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IC FLASH 512MBIT PARALLEL 48TSOP

IC FLASH 512MBIT PARALLEL 48TSOP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - NAND512W4A0AN6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND512W4A0AN6E
Integrated Circuits (ICs) - Memory - Memory NAND512W4A0AN6E
IC FLASH 512MBIT PARALLEL 48TSOP

IC FLASH 512MBIT PARALLEL 48TSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number NAND512W4A0AN6E NAND512W4A0AN6E NAND512W4A0AN6E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 50 ns 50 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits
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