Micron Technology, Inc. Memory NAND512R3A2SZA6E

Description
IC FLSH 512MBIT PARALLEL 63VFBGA
Request a Quote Datasheet
Description
IC FLSH 512MBIT PARALLEL 63VFBGA
Request a Quote Datasheet

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Product
Description
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IC FLSH 512MBIT PARALLEL 63VFBGA

IC FLSH 512MBIT PARALLEL 63VFBGA

Supplier's Site Datasheet
Memory - Flash - NAND512R3A2SZA6E - 1081646-NAND512R3A2SZA6E - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - NAND512R3A2SZA6E
1081646-NAND512R3A2SZA6E
Memory - Flash - NAND512R3A2SZA6E 1081646-NAND512R3A2SZA6E
Manufacturer: Micron Technology Inc. Win Source Part Number: 1081646-NAND512R3A2S ZA6E Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 512Mb (64M x 8) Access Time: 50ns Family Name: NAND512R3A Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 63-VFBGA (9x11) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Alternative Parts (Cross-Reference): K9K1208D0C-HCB0; K9K1208Q0C-DCB0; K9K1216D0C-JIB0; Introduction Date: May 04, 2011 ECCN: 3A991.b.1.a Country of Origin: China Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Win Source Part Number: 1081646-NAND512R3A2SZA6E
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 512Mb (64M x 8)
Access Time: 50ns
Family Name: NAND512R3A
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 63-VFBGA (9x11)
Supply Voltage - Operating: 1.7 V to 1.95 V
Memory Format: FLASH
Alternative Parts (Cross-Reference): K9K1208D0C-HCB0; K9K1208Q0C-DCB0; K9K1216D0C-JIB0;
Introduction Date: May 04, 2011
ECCN: 3A991.b.1.a
Country of Origin: China
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Memory IC and Storage Component - 774-NAND512R3A2SZA6E - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-NAND512R3A2SZA6E
Memory IC and Storage Component 774-NAND512R3A2SZA6E
IC FLASH 512MBIT PAR 63VFBGA Product overview: NAND512R3A2SZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND512R3A2SZA6E can be used for catalog matching and distributor lookup.

IC FLASH 512MBIT PAR 63VFBGA Product overview: NAND512R3A2SZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND512R3A2SZA6E can be used for catalog matching and distributor lookup.

Supplier's Site
IC FLSH 512MBIT PARALLEL 63VFBGA

IC FLSH 512MBIT PARALLEL 63VFBGA

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND512R3A2SZA6E
Integrated Circuits (ICs) - Memory - Memory NAND512R3A2SZA6E
IC FLASH 512MBIT PAR 63VFBGA

IC FLASH 512MBIT PAR 63VFBGA

Supplier's Site
Memory - NAND512R3A2SZA6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 63-VFBGA (9x11)

FLASH - NAND Memory IC 512Mbit Parallel 50 ns 63-VFBGA (9x11)

Buy Now

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number NAND512R3A2SZA6E 1081646-NAND512R3A2SZA6E 774-NAND512R3A2SZA6E NAND512R3A2SZA6E NAND512R3A2SZA6E NAND512R3A2SZA6E
Product Name Memory Memory - Flash - NAND512R3A2SZA6E Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category FLASH - NAND Flash; FLASH Flash; Non-Volatile Flash; Flash Flash; Non-Volatile Flash; FLASH
Access Time 50 ns 50 ns 50 ns 50 ns 50 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 63-TFBGA BGA; 63-VFBGA (9x11) BGA; Tray BGA; 63-TFBGA
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