IC FLSH 512MBIT PARALLEL 63VFBGA
IC FLASH 512MBIT PAR 63VFBGA Product overview: NAND512R3A2DZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND512R3A2DZA6E
Manufacturer: Micron Technology Inc.
Win Source Part Number: 209018-NAND512R3A2DZ
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 512Mb (64M x 8)
Access Time: 50ns
Family Name: NAND512R3A2D
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 63-VFBGA (9x11)
Supply Voltage - Operating: 1.7 V to 1.95 V
Memory Format: FLASH
Alternative Parts (Cross-Reference): HY27SS16121M-FEP; HY27SS08121M-FPIB; K9K1216Q0C-HIB0; K9K1216Q0C-JIB0;
Introduction Date: February 10, 2009
ECCN: 3A991.b.1.a
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
IC FLASH 512MBIT PAR 63VFBGA
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 63-VFBGA (9x11)
IC FLSH 512MBIT PARALLEL 63VFBGA
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | NAND512R3A2DZA6E | 774-NAND512R3A2DZA6E | 209018-NAND512R3A2DZA6E | NAND512R3A2DZA6E | NAND512R3A2DZA6E | NAND512R3A2DZA6E |
| Product Name | Memory | Memory IC and Storage Component | Memory - Flash - NAND512R3A2DZA6E | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | FLASH - NAND | Flash; Non-Volatile | Flash; FLASH | Flash; Non-Volatile | Flash; FLASH | Flash; Flash |
| Access Time | 50 ns | 50 ns | 50 ns | 50 ns | 50 ns | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits |