Micron Technology, Inc. Memory NAND512R3A2DZA6E

Description
IC FLSH 512MBIT PARALLEL 63VFBGA
Request a Quote Datasheet
Description
IC FLSH 512MBIT PARALLEL 63VFBGA
Request a Quote Datasheet

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Product
Description
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IC FLSH 512MBIT PARALLEL 63VFBGA

IC FLSH 512MBIT PARALLEL 63VFBGA

Supplier's Site
Memory IC and Storage Component - 774-NAND512R3A2DZA6E - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-NAND512R3A2DZA6E
Memory IC and Storage Component 774-NAND512R3A2DZA6E
IC FLASH 512MBIT PAR 63VFBGA Product overview: NAND512R3A2DZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND512R3A2DZA6E can be used for catalog matching and distributor lookup.

IC FLASH 512MBIT PAR 63VFBGA Product overview: NAND512R3A2DZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND512R3A2DZA6E can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - Flash - NAND512R3A2DZA6E - 209018-NAND512R3A2DZA6E - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - NAND512R3A2DZA6E
209018-NAND512R3A2DZA6E
Memory - Flash - NAND512R3A2DZA6E 209018-NAND512R3A2DZA6E
Manufacturer: Micron Technology Inc. Win Source Part Number: 209018-NAND512R3A2DZ A6E Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 512Mb (64M x 8) Access Time: 50ns Family Name: NAND512R3A2D Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 63-VFBGA (9x11) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Alternative Parts (Cross-Reference): HY27SS16121M-FEP; HY27SS08121M-FPIB; K9K1216Q0C-HIB0; K9K1216Q0C-JIB0; Introduction Date: February 10, 2009 ECCN: 3A991.b.1.a Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Win Source Part Number: 209018-NAND512R3A2DZA6E
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 512Mb (64M x 8)
Access Time: 50ns
Family Name: NAND512R3A2D
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 63-VFBGA (9x11)
Supply Voltage - Operating: 1.7 V to 1.95 V
Memory Format: FLASH
Alternative Parts (Cross-Reference): HY27SS16121M-FEP; HY27SS08121M-FPIB; K9K1216Q0C-HIB0; K9K1216Q0C-JIB0;
Introduction Date: February 10, 2009
ECCN: 3A991.b.1.a
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now
Integrated Circuits (ICs) - Memory - Memory - NAND512R3A2DZA6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND512R3A2DZA6E
Integrated Circuits (ICs) - Memory - Memory NAND512R3A2DZA6E
IC FLASH 512MBIT PAR 63VFBGA

IC FLASH 512MBIT PAR 63VFBGA

Supplier's Site
Memory - NAND512R3A2DZA6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 63-VFBGA (9x11)

FLASH - NAND Memory IC 512Mbit Parallel 50 ns 63-VFBGA (9x11)

Buy Now
IC FLSH 512MBIT PARALLEL 63VFBGA

IC FLSH 512MBIT PARALLEL 63VFBGA

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number NAND512R3A2DZA6E 774-NAND512R3A2DZA6E 209018-NAND512R3A2DZA6E NAND512R3A2DZA6E NAND512R3A2DZA6E NAND512R3A2DZA6E
Product Name Memory Memory IC and Storage Component Memory - Flash - NAND512R3A2DZA6E Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category FLASH - NAND Flash; Non-Volatile Flash; FLASH Flash; Non-Volatile Flash; FLASH Flash; Flash
Access Time 50 ns 50 ns 50 ns 50 ns 50 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
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