IC FLASH 256MBIT PARALLEL 48TSOP Product overview: NAND256W3A2BN6F TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND256W3A2BN6F TR can be used for catalog matching and distributor lookup.
Manufacturer: Micron Technology Inc.
Win Source Part Number: 128999-NAND256W3A2BN
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 256Mb (32M x 8)
Access Time: 50ns
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 48-TSOP
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
FLASH - NAND Memory IC 256Mbit Parallel 50 ns 48-TSOP
IC FLASH 256MBIT PARALLEL 48TSOP
IC FLASH 256MBIT PARALLEL 48TSOP
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-NAND256W3A2BN6F TR | 128999-NAND256W3A2BN6F TR | NAND256W3A2BN6F TR | NAND256W3A2BN6F TR | NAND256W3A2BN6F TR |
| Product Name | Memory IC and Storage Component | Memory - Flash - NAND256W3A2BN6F TR | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Flash; Non-Volatile | Flash; FLASH | Flash; FLASH | Flash; Non-Volatile | Flash; Flash |
| Access Time | 50 ns | 50 ns | 50 ns | 50 ns | |
| Cycle Time | 50 ns | 50 ns | |||
| Endurance | 100000 Write/Erase Cycles | ||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
