Micron Technology, Inc. Memory NAND256W3A2BE06

Description
FLASH - NAND Memory IC 256Mbit Parallel 50 ns
Datasheet
Description
FLASH - NAND Memory IC 256Mbit Parallel 50 ns
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NAND256W3A2BE06 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 256Mbit Parallel 50 ns

FLASH - NAND Memory IC 256Mbit Parallel 50 ns

Buy Now
IC FLASH 256MBIT PARALLEL WAFER

IC FLASH 256MBIT PARALLEL WAFER

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number NAND256W3A2BE06 NAND256W3A2BE06
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - IS29GL512S-11DHV013 - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers
Memory - MYX4DD3K512M64PBG2 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096000 kbits
View Details
Flash Memory - 1882723P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 16000 kbits
Package Type USON
View Details
Logic - FIFOs Memory - 67C4033-15NL - Lingto Electronic Limited
Specs
Data Rate 15 MHz
Operating Current 45 mA
View Details