Micron Technology, Inc. Memory NAND256W3A2BE06

Description
FLASH - NAND Memory IC 256Mbit Parallel 50 ns
  • Memory - NAND256W3A2BE06 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - NAND256W3A2BE06 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NAND Memory IC 256Mbit Parallel 50 ns
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NAND256W3A2BE06 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
NAND256W3A2BE06
Memory NAND256W3A2BE06
FLASH - NAND Memory IC 256Mbit Parallel 50 ns

FLASH - NAND Memory IC 256Mbit Parallel 50 ns

Buy Now
Memory - NAND256W3A2BE06 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
NAND256W3A2BE06
Memory NAND256W3A2BE06
IC FLASH 256MBIT PARALLEL WAFER

IC FLASH 256MBIT PARALLEL WAFER

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number NAND256W3A2BE06 NAND256W3A2BE06
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 04364ARLAC-6P - Lingto Electronic Limited
Rochester Electronics
Memory
04364ARLAC-6P
View Details
Flash Memory - 1882526 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882526
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details
Memory - SMJ44C251B - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ44C251B
Specs
Memory Category NVRAM; VRAM
Access Time 100 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 16-3417-01 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
16-3417-01
View Details
2 suppliers