Micron Technology, Inc. Memory NAND256W3A0BZA6E

Description
FLASH - NAND Memory IC 256Mbit Parallel 50 ns 55-VFBGA (8x10)
  • Memory - NAND256W3A0BZA6E - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - NAND256W3A0BZA6E - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NAND Memory IC 256Mbit Parallel 50 ns 55-VFBGA (8x10)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NAND256W3A0BZA6E - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
NAND256W3A0BZA6E
Memory NAND256W3A0BZA6E
FLASH - NAND Memory IC 256Mbit Parallel 50 ns 55-VFBGA (8x10)

FLASH - NAND Memory IC 256Mbit Parallel 50 ns 55-VFBGA (8x10)

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Memory - NAND256W3A0BZA6E - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
NAND256W3A0BZA6E
Memory NAND256W3A0BZA6E
IC FLSH 256MBIT PARALLEL 55VFBGA

IC FLSH 256MBIT PARALLEL 55VFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number NAND256W3A0BZA6E NAND256W3A0BZA6E
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 50 ns 50 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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