Micron Technology, Inc. Memory NAND256W3A0BZA6E

Description
IC FLSH 256MBIT PARALLEL 55VFBGA
  • Memory - NAND256W3A0BZA6E - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - NAND256W3A0BZA6E - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC FLSH 256MBIT PARALLEL 55VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NAND256W3A0BZA6E - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
NAND256W3A0BZA6E
Memory NAND256W3A0BZA6E
IC FLSH 256MBIT PARALLEL 55VFBGA

IC FLSH 256MBIT PARALLEL 55VFBGA

Supplier's Site Datasheet
Memory - NAND256W3A0BZA6E - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
NAND256W3A0BZA6E
Memory NAND256W3A0BZA6E
FLASH - NAND Memory IC 256Mbit Parallel 50 ns 55-VFBGA (8x10)

FLASH - NAND Memory IC 256Mbit Parallel 50 ns 55-VFBGA (8x10)

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Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number NAND256W3A0BZA6E NAND256W3A0BZA6E
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 50 ns 50 ns
Density 256000 kbits 256000 kbits
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