Home

Products & Services

Engineering News

Standards

Webinars

Engineering Forum

Micron Technology, Inc. Memory NAND16GW3D2BN6E

Description

FLASH - NAND Memory IC 16Gbit Parallel 25 ns 48-TSOP

Quarktwin Technology Ltd.
Lingto Electronic Limited

Datasheet

Description

FLASH - NAND Memory IC 16Gbit Parallel 25 ns 48-TSOP

Datasheet

Suppliers

Company

Product

Description

Supplier Links

Memory - NAND16GW3D2BN6E - Quarktwin Technology Ltd.

Quarktwin Technology Ltd.

Shenzhen, Guangdong, China

Memory
NAND16GW3D2BN6E

Memory NAND16GW3D2BN6E

FLASH - NAND Memory IC 16Gbit Parallel 25 ns 48-TSOP

Buy Now

Datasheet

Memory - NAND16GW3D2BN6E - Lingto Electronic Limited

Lingto Electronic Limited

Shenzhen, China

Memory
NAND16GW3D2BN6E

Memory NAND16GW3D2BN6E

IC FLASH 16GBIT PARALLEL 48TSOP

Supplier's Site

Datasheet

Technical Specifications

	Quarktwin Technology Ltd.	Lingto Electronic Limited
Product Category	Memory Chips	Memory Chips
Product Number	NAND16GW3D2BN6E	NAND16GW3D2BN6E
Product Name	Memory	Memory
Memory Category	Flash; FLASH	Flash; Flash
Access Time	25 ns	25 ns
Operating Temperature	-40 to 85 C (-40 to 185 F)

Unlock Full Specs

to access all available technical data

Similar Products

Quad Memory IC and Storage Component - 774-S25FL064LABBHN033 - ERSAELECTRONICS PTE. LTD.

Infineon Technologies AG

Quad Memory IC and Storage Component

S25FL064LABBHN033

Specs

Memory Category Flash; Non-Volatile

Operating Temperature -40 to 125 C (-40 to 257 F)

Address Bus Width 8 bits

4 suppliers

Memory - AS5SP512K36 - Micross Components, Inc.

Micross Components, Inc.

Specs

Memory Category SSRAM; SRAM Chip

Operating Temperature -55 to 125 C (-67 to 257 F)

Density 4096 kbits

Flash Memory - 1882811P - RS Components, Ltd.

RS Components, Ltd.

Specs

Memory Category Flash

Package Type WSON

Pins 8

Memory - 71256S55DB - Lingto Electronic Limited

Rochester Electronics

Specs

Memory Category SRAM; SRAM Chip

Access Time 55 ns

Density 256 kbits