Micron Technology, Inc. Memory NAND16GW3D2BN6E

Description
IC FLASH 16GBIT PARALLEL 48TSOP
  • Memory - NAND16GW3D2BN6E - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - NAND16GW3D2BN6E - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC FLASH 16GBIT PARALLEL 48TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NAND16GW3D2BN6E - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
NAND16GW3D2BN6E
Memory NAND16GW3D2BN6E
IC FLASH 16GBIT PARALLEL 48TSOP

IC FLASH 16GBIT PARALLEL 48TSOP

Supplier's Site Datasheet
Memory - NAND16GW3D2BN6E - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
NAND16GW3D2BN6E
Memory NAND16GW3D2BN6E
FLASH - NAND Memory IC 16Gbit Parallel 25 ns 48-TSOP

FLASH - NAND Memory IC 16Gbit Parallel 25 ns 48-TSOP

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number NAND16GW3D2BN6E NAND16GW3D2BN6E
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 25 ns 25 ns
Density 16000000 kbits 16000000 kbits
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