Micron Technology, Inc. Memory NAND16GW3B6DPA6F TR

Description
IC FLSH 16GBIT PARALLEL 114LFBGA
Description
IC FLSH 16GBIT PARALLEL 114LFBGA

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IC FLSH 16GBIT PARALLEL 114LFBGA

IC FLSH 16GBIT PARALLEL 114LFBGA

Supplier's Site
Memory - NAND16GW3B6DPA6F TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 16Gbit Parallel 25 ns 114-LFBGA (12x16)

FLASH - NAND Memory IC 16Gbit Parallel 25 ns 114-LFBGA (12x16)

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND16GW3B6DPA6F TR
Integrated Circuits (ICs) - Memory - Memory NAND16GW3B6DPA6F TR
IC FLSH 16GBIT PARALLEL 114LFBGA

IC FLSH 16GBIT PARALLEL 114LFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number NAND16GW3B6DPA6F TR NAND16GW3B6DPA6F TR NAND16GW3B6DPA6F TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Access Time 25 ns 25 ns
Density 16000000 kbits 16000000 kbits 16000000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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