IC FLASH 8GBIT PARALLEL 48TSOP Product overview: NAND08GW3F2AN6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND08GW3F2AN6E can be used for catalog matching and distributor lookup.
Manufacturer: Micron Technology Inc.
Win Source Part Number: 059811-NAND08GW3F2AN
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 8Gb (1G x 8)
Access Time: 25ns
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 48-TSOP
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
FLASH - NAND Memory IC 8Gb (1G x 8) Parallel 25ns 48-TSOP
IC FLASH 8GBIT PARALLEL 48TSOP
IC FLASH 8GBIT PARALLEL 48TSOP
FLASH - NAND Memory IC 8Gbit Parallel 25 ns 48-TSOP
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-NAND08GW3F2AN6E | 059811-NAND08GW3F2AN6E | NAND08GW3F2AN6E-ND | NAND08GW3F2AN6E | NAND08GW3F2AN6E | NAND08GW3F2AN6E |
| Product Name | Memory IC and Storage Component | Memory - Flash - NAND08GW3F2AN6E | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Flash; Non-Volatile | Flash; FLASH | Flash | Flash; Non-Volatile | Flash; Flash | Flash; FLASH |
| Access Time | 25 ns | 25 ns | 25 ns | 25 ns | ||
| Cycle Time | 25 ns | 25 ns | ||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
