IC FLASH 4GBIT PARALLEL 48TSOP Product overview: NAND04GW3B2DN6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND04GW3B2DN6E can be used for catalog matching and distributor lookup.
IC FLASH 4GBIT PARALLEL 48TSOP
Manufacturer: Micron Technology Inc.
Win Source Part Number: 086572-NAND04GW3B2DN
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Access Time: 25ns
Categories: Integrated Circuits
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 48-TSOP
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 25ns 48-TSOP
IC FLASH 4GBIT PARALLEL 48TSOP
IC FLASH 4GBIT PARALLEL 48TSOP
FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-NAND04GW3B2DN6E | NAND04GW3B2DN6E | 086572-NAND04GW3B2DN6E | NAND04GW3B2DN6E-ND | NAND04GW3B2DN6E | NAND04GW3B2DN6E | NAND04GW3B2DN6E |
| Product Name | Memory IC and Storage Component | Memory | Memory - Flash - NAND04GW3B2DN6E | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Flash; Non-Volatile | Flash; FLASH - NAND | Flash; FLASH | Flash | Flash; Non-Volatile | Flash; Flash | Flash; FLASH |
| Access Time | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns | ||
| Cycle Time | 25 ns | 25 ns | |||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
