Micron Technology, Inc. 1.8V 3V Memory IC and Storage Component NAND02GW3B2CN6E

Description
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Product overview: NAND02GW3B2CN6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V, 3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.8V, 3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND02GW3B2CN6E can be used for catalog matching and distributor lookup.
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Description
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Product overview: NAND02GW3B2CN6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V, 3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.8V, 3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND02GW3B2CN6E can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
1.8V 3V Memory IC and Storage Component - 774-NAND02GW3B2CN6E - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
1.8V 3V Memory IC and Storage Component
774-NAND02GW3B2CN6E
1.8V 3V Memory IC and Storage Component 774-NAND02GW3B2CN6E
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Product overview: NAND02GW3B2CN6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V, 3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.8V, 3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND02GW3B2CN6E can be used for catalog matching and distributor lookup.

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Product overview: NAND02GW3B2CN6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V, 3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.8V, 3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND02GW3B2CN6E can be used for catalog matching and distributor lookup.

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Technical Specifications

  ERSAELECTRONICS PTE. LTD.
Product Category Memory Chips
Product Number 774-NAND02GW3B2CN6E
Product Name 1.8V 3V Memory IC and Storage Component
Memory Category Flash
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