Micron Technology, Inc. Memory - Flash - NAND01GW3B2CZA6E NAND01GW3B2CZA6E

Description
Manufacturer: Micron Technology Inc. Win Source Part Number: 086859-NAND01GW3B2CZ A6E Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Access Time: 25ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 63-VFBGA (9.5x12) Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Micron Technology Inc. Win Source Part Number: 086859-NAND01GW3B2CZ A6E Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Access Time: 25ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 63-VFBGA (9.5x12) Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - NAND01GW3B2CZA6E - 086859-NAND01GW3B2CZA6E - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - NAND01GW3B2CZA6E
086859-NAND01GW3B2CZA6E
Memory - Flash - NAND01GW3B2CZA6E 086859-NAND01GW3B2CZA6E
Manufacturer: Micron Technology Inc. Win Source Part Number: 086859-NAND01GW3B2CZ A6E Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Access Time: 25ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 63-VFBGA (9.5x12) Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Win Source Part Number: 086859-NAND01GW3B2CZA6E
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Access Time: 25ns
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 63-VFBGA (9.5x12)
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

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Memory IC and Storage Component - 774-NAND01GW3B2CZA6E - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-NAND01GW3B2CZA6E
Memory IC and Storage Component 774-NAND01GW3B2CZA6E
IC FLASH 1GBIT PARALLEL 63VFBGA Product overview: NAND01GW3B2CZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND01GW3B2CZA6E can be used for catalog matching and distributor lookup.

IC FLASH 1GBIT PARALLEL 63VFBGA Product overview: NAND01GW3B2CZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND01GW3B2CZA6E can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - NAND01GW3B2CZA6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 25 ns 63-VFBGA (9.5x12)

FLASH - NAND Memory IC 1Gbit Parallel 25 ns 63-VFBGA (9.5x12)

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IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND01GW3B2CZA6E
Integrated Circuits (ICs) - Memory - Memory NAND01GW3B2CZA6E
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. ODG (Origin Data Global) Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 086859-NAND01GW3B2CZA6E 774-NAND01GW3B2CZA6E NAND01GW3B2CZA6E NAND01GW3B2CZA6E NAND01GW3B2CZA6E NAND01GW3B2CZA6E
Product Name Memory - Flash - NAND01GW3B2CZA6E Memory IC and Storage Component Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; FLASH Flash; FLASH - NAND Flash; Flash Flash; Non-Volatile
Access Time 25 ns 25 ns 25 ns 25 ns 25 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type BGA; 63-VFBGA (9.5x12) BGA; Tray BGA; 63-TFBGA 63-TFBGA BGA
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